GaN/ Al₂O₃ Substrates (4")  4英寸氮化镓复合衬底

Item 产品型号

Un-doped

N-type

High-doped N-type

Size 尺寸 (mm)

Φ100.0±0.5 (4")

Substrate Structure衬底结构

GaN on Sapphire(0001)

SurfaceFinished 表面处理

(Standard: SSP Option: DSP)

Thickness 厚度(μm)

4.5±0.5; 20±2;Customized

Conduction Type 导电类型

Un-doped

N-type

High-doped N-type

Resistivity 电阻率 (Ω·cm）(300K)

≤0.5

≤0.05

≤0.01

GaN Thickness Uniformity
GaN厚度不均匀性

≤±10% (4")

Dislocation Density (cm-2)
位错密度

≤5×108

有效面积 Useable Surface Area

＞90%

Package 包装

Packaged in a class 100 clean room environment.